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Descr: . Electronic Components Datasheets Active components Transistors Wietron mpsa92.pdf
Group:Electronics > Components > Transistors
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MPSA92 High-Voltage PNP Transistors P b Lead(Pb)-Free TO-92 1. EMITTER 1 2. BASE 2 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage VCEO -305 Vdc Collector-Base Voltage VCBO -310 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current IC -500 mAdc Total Device Dissipation TA=25 C PD 0.625 W Junction Temperature Tj 150 C Storage, Temperature Tstg -55 to +150 C ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC= -1.0 mAdc, IB=0) V(BR)CEO -305 - Vdc Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0) V(BR)CBO -310 - Vdc - Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0) V(BR)EBO -5.0 Vdc Collector Cutoff Current (VCB= -200 Vdc, IE=0) ICBO - -0.25 uAdc Emitter Cutoff Current (VEB= -5.0Vd c, IC =0) IEBO - -0.1 uAdc WEITRON http://www.weitron.com.tw MPSA92 WEITRON Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit On Characteristics DC Current Gain (IC= -1.0 mAdc, VCE=-10Vdc) HFE(1) 60 - (IC= -10 mAdc, VCE= -10Vdc) HFE(2) 80 250 - (IC= -80 mA dc, VCE= -10Vdc) HFE(3) 60 - Collector-Emitter Saturation Voltage (IC= -20 mAdc, IB= -2.0 mAdc) VCE(sat)

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