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MPSA92
High-Voltage PNP Transistors
P b Lead(Pb)-Free
TO-92


1. EMITTER 1
2. BASE 2
3
3. COLLECTOR



ABSOLUTE MAXIMUM RATINGS (Ta=25 C)

Rating Symbol Value Unit
Collector-Emitter Voltage VCEO -305 Vdc
Collector-Base Voltage VCBO -310 Vdc
Emitter-Base Voltage VEBO -5.0 Vdc
Collector Current IC -500 mAdc
Total Device Dissipation TA=25 C PD 0.625 W
Junction Temperature Tj 150 C
Storage, Temperature Tstg -55 to +150 C




ELECTRICAL CHARACTERISTICS

Characteristics Symbol Min Max Unit
Collector-Emitter Breakdown Voltage (IC= -1.0 mAdc, IB=0) V(BR)CEO -305 - Vdc

Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0) V(BR)CBO -310 - Vdc
-
Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0) V(BR)EBO -5.0 Vdc

Collector Cutoff Current (VCB= -200 Vdc, IE=0) ICBO - -0.25 uAdc

Emitter Cutoff Current (VEB= -5.0Vd c, IC =0) IEBO - -0.1 uAdc




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MPSA92 WEITRON
Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min Max Unit

On Characteristics
DC Current Gain
(IC= -1.0 mAdc, VCE=-10Vdc) HFE(1) 60 -
(IC= -10 mAdc, VCE= -10Vdc) HFE(2) 80 250 -
(IC= -80 mA dc, VCE= -10Vdc) HFE(3) 60 -

Collector-Emitter Saturation Voltage
(IC= -20 mAdc, IB= -2.0 mAdc) VCE(sat) - -0.2 Vdc



Base-Emitter Saturation Voltage
VBE(sat) - -0.9 Vdc
(IC= -20 mAdc, IB= -2.0 mAdc)

Current-Gain-Bandwidth Product
fT - MHz
(IC= -10 mAdc, VCE= -20 Vdc, f=30MHz) 50




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MPSA92

TO-92 Outline Dimensions unit:mm

E




TO-92
H




Dim Min Max
C A 3.30 3.70
B 1.10 1.40
C 0.38 0.55
D 0.36 0.51
L




E 4.40 4.70
G 3.43 -
H 4.30 4.70
J
J 1.270TYP
K
K 2.44 2.64
G
L 14.10 14.50
B
A
D




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