HT Semiconductor 2sa1873 free download

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2SA1873 DUAL TRANSISTOR (PNP+ PNP) Features Small package (dual type) SOT-353 High voltage and high current High hFE Excellent hFE linearity Complementary to 2SC4944 1 MARKING: SY SGR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -150 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 Tstg Storage Temperature -55 to150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ M ax Unit Collector-base breakdown voltage V(BR)CBO IC=-100A,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-10A,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -0.1 A Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 A DC current gain hFE VCE=-6V,IC=-2mA 120 400 Collector-emitter saturation voltage VCE(sat) IC=-100mA,IB=-10mA -0.3 V Transition frequency fT VCE=-10V,IC=-1mA 80 MHz Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 7 pF CLASSIFICATION OF hFE Rank Y GR Range 120-240 200-400 Marking SY SGR 1 JinYu