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STL26NM60N N-channel 600 V, 0.160 19 A PowerFLATTM (8x8) HV , ultra low gate charge MDmeshTM II Power MOSFET Features VDSS @ RDS(on) Type ID TJmax max STL26NM60N 650 V < 0.185 19 A (1) 1. The value is rated according to Rthj-case 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Application Switching applications Description Figure 1. Internal schematic diagram This device is made using the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order code Marking Package Packaging STL26NM60N 26NM60N PowerFLATTM (8x8) HV Tape and reel February 2011 Doc ID 18472 Rev 1 1/13 www.st.com 13 Contents STL26NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 6 3 Test circuits ... 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 Doc ID 18472 Rev 1 STL26NM60N Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 600 V VGS Gate-source voltage