Samsung bu406 free download

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BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TO-220 USE IN HORIZONTAL DEFLECTION OUTPUT STAGE ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 200 V Emitter-Base Voltage VEBO 6 V Collector Current IC 7 A 1.Base 2.Collector 3.Emitter Collector Peck Current ICM 10 A Base Current IB 4 A Collector Dissipation ( T C=25 ) PC 60 W Junction Temperature TJ 150 Storage Temperature T STG -55 ~150 ELECTRICAL CHARACTERISTICS (Tc =25) Characteristic Symbol Test Conditions Min Max Unit Collector Cutoff Current (VBE=0) ICES VCE = 400V, VBE = 0 5 mA VCE = 250V, VBE = 0 100 uA VCE = 250V, VBE = 0, T C = 150 1 mA Emitter Cutoff Current (IC=0) IEBO VBE = 6V, IC = 0 1 mA Collector Emitter Saturation Voltage : BU406 VCE(sat) IC = 5A, IB = 0.5A 1 V : BU406H IC = 5A, IB = 0.8A 1 V : BU408 IC = 6A, IB = 1.2A 1 V Base Emitter Saturation Voltage : BU406 VBE(sat) IC = 5A, IB = 0.5A 1.2 V : BU406H IC = 5A, IB = 0.5A 1.2 V : BU408 IC = 6A, IB = 1.2A 1.5 V Current Gain- Bandwidth Product fT VCE = 10V, IC = 0.5A 10 MHz Turn-off Time : BU406 toff IC = 5A, IB = 0.5A 0.75 uS : BU406H IC = 5A, IB = 0.8A 0.4 uS : BU408 IC = 6A, IB = 1.2A 0.4 uS BU406/406H/408 NPN EPITAXIAL SILICON T