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MJE13005 SILICON NPN SWITCHING TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The MJE13005 is a silicon multiepitaxial mesa NPN transistor in Jedec TO-220 plastic package particularly intended for switch-mode applications. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CEV Collector-Emitter Voltage 700 V V CEO Collector-Emitter Voltage (I B = 0) 400 V V EBO Emitter-Base Voltage (I C = 0) 9 V IC Collector Current 4 A I CM Collector Peak Current 8 A IB Base Current 2 A I BM Base Peak Current 4 A P tot Total Power Dissipation at Tcase 25 o C 75 W o T stg Storage Temperature -65 to +150 C o Tj Max. Operating Junction Temperature 150 C October 1995 1/4 MJE13005 THERMAL DATA o R thj-case Thermal Resistance Junction-case Max 1.67 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit Collector Cut-off V CE = 700V 1 mA I CEV Current (V BE = -1.5V) V CE = 700V T case = 100 o C 5 mA Emitter Cut-off I EBO V EB = 9 V 1 mA Current (I C = 0) Collector-Emitter VCEO(sus) Sustaining Voltage I C = 10 mA 400