Philips bf1205 free download

File name bf1205.pdf

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BF1205 Dual N-channel dual gate MOS-FET Product specification 2003 Sep 30 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FET BF1205 FEATURES PINNING - SOT363 Two low noise gain controlled amplifiers in a single PIN DESCRIPTION package. One with a fully integrated bias and one with a 1 gate 1 (a) partly integrated bias 2 gate 2 Internal switch reduces the number of external components 3 gate 1 (b) Superior cross-modulation performance during AGC 4 drain (b) High forward transfer admittance 5 source High forward transfer admittance to input capacitance 6 drain (a) ratio. APPLICATIONS handbook, halfpage d (a) s d (b) Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage, such as digital and 6 5 4 analog television tuners and professional communications equipment. AMP AMP a b DESCRIPTION The BF1205 is a combination of two equal dual gate 1 2 3 MOS-FET amplifiers with shared source and gate 2 leads Top view g1 (a) g2 g1 (b) and an integrated switch. The integrated switch is MGX429 operated by the gate 1 bias of amplifier b. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation Marking code: L4-. performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage Fig.1 Simplified outline and symbol. surges. The transistor is encapsulated in SOT363 micro-miniature plastic package. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME