ST stp4nc80z free download

File name stp4nc80z.pdf

STP4NC80Z - STP4NC80ZFP STB4NC80Z - STB4NC80Z-1 N-CHANNEL 800V - 2.4 - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESHTMIII MOSFET TYPE VDSS RDS(on) ID STP4NC80Z/FP 800V < 2.8 4A STB4NC80Z/-1 800V < 2.8 4A 3 1 s TYPICAL RDS(on) = 2.4 2 D PAK 3 2 s EXTREMELY HIGH dv/dt AND CAPABILITY 1 GATE-TO- SOURCE ZENER DIODES TO-220 TO-220FP s 100% AVALANCHE TESTED s VERY LOW GATE INPUT RESISTANCE s GATE CHARGE MINIMIZED 23 I2PAK 1 DESCRIPTION (Tabless TO-220) The third generation of MESH OVERLAYTM Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to- back Zener diodes between gate and source. Such ar- rangement gives extra ESD capability with higher rug- gedness performance as requested by a large variety of single-switch applications. APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP(B)4NC80Z(-1) STP4NC80ZFP VDS Drain-source Voltage (VGS = 0) 800 V VDGR Drain-gate Voltage (RGS = 20 k) 800 V VGS Gate- source Voltage