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ESM2012DV NPN DARLINGTON POWER MODULE s HIGH CURRENT POWER BIPOLAR MODULE s VERY LOW Rth JUNCTION TO CASE s SPECIFIED ACCIDENTAL OVERLOAD AREAS s ULTRAFAST FREEWHEELING DIODE s ISOLATED CASE (2500V RMS) s EASY TO MOUNT s LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: s MOTOR CONTROL s UPS s DC/DC & DC/AC CONVERTERS ISOTOP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCEV Collector-Emitter Voltage (VBE = -5 V) 150 V VCEO(sus) Collector-Emitter Voltage (IB = 0) 120 V VEBO Emitter-Base Voltage (I C = 0) 7 V IC Collector Current 120 A ICM Collector Peak Current (t p = 10 ms) 180 A IB Base Current 2 A I BM Base Peak Current (t p = 10 ms) 4 A Pt ot Tot al Dissipation at T c = 25 o C 175 W o T stg Storage Temperature -55 to 150 C o Tj Max. Ope rating Junction Temperature 150 C o VI SO Insulation Withstand Voltage (AC-RMS) 2500 C September 1997 1/8 ESM2012DV THERMAL DATA o R thj-ca se Thermal Resistance Junction-case (transistor) Max 0.7 C/W o R thj-ca se Thermal Resistance Junction-case (diode) Max 0.9 C/W R t hc-h Thermal Resistance Case-heatsink With Conductive o Grease Applied Max 0.05 C/W o ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) Symbol Parameter