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Electronic components, integrated circuits, semiconductor - datasheets and schematics

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File name:bulk128d.pdf
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Mfg:ST
Model:bulk128d 🔎
Original:bulk128d 🔎
Descr: . Electronic Components Datasheets Active components Transistors ST bulk128d.pdf
Group:Electronics > Components > Transistors
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File name bulk128d.pdf

BULK128D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE s ORDERING CODES : BULK128D-A AND BULK128D-B s NPN TRANSISTOR s HIGH VOLTAGE CAPABILITY s LOW SPREAD OF DYNAMIC PARAMETERS s MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION s VERY HIGH SWITCHING SPEED 3 2 1 APPLICATIONS: s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING SOT-82 s FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high INTERNAL SCHEMATIC DIAGRAM switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t V CES Collector-Emitter Voltage (V BE = 0) 700 V V CEO Collector-Emitter Voltage (I B = 0) 400 V V EBO Emitter-Base Voltage (I C = 0) 9 V IC Collector Current 4 A I CM Collector Peak Current (tp < 5 ms) 8 A IB Base Current 2 A I BM Base Peak Current (t p < 5 ms) 4 A P t ot Total Dissipation at T c = 25 o C 55 W o T stg St orage Temperature -65 to 150 C o Tj Max. Operating Junction Temperature 150 C December 1997 1/7 BULK128D THERMAL DATA o R t hj-ca se Thermal Resistance Junction-Case Max 2.27 C/W o R t hj- amb Thermal Resistance Junction-Ambien

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