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MJD50 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE s HIGH VOLTAGE CAPABILITY s SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") s ELECTRICAL SIMILAR TO TIP50 APPLICATIONS 3 s SWITCH MODE POWER SUPPLIES 1 s AUDIO AMPLIFIERS s GENERAL PURPOSE SWITCHING AND DPAK AMPLIFIER TO-252 DESCRIPTION (Suffix "T4") The MJD50 is manufactured using Medium Voltage Epitaxial Planar technology, resulting in a rugged high performance cost-effective transistor. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t V CBO Collector-Base Voltage (IE = 0) 500 V V CEO Collector-Emitter Voltage (I B = 0) 400 V V EBO Emitter-Base Voltage (I C = 0) 5 V IC Collector Current 1 A I CM Collector Peak Current (tp < 5 ms) 2 A IB Base Current 0.6 A I BM Base Peak Current (t p < 5 ms) 1.2 A P t ot Total Dissipation at T c = 25 o C 15 W o T stg St orage Temperature -65 to 150 C o Tj Max. Operating Junction Temperature 150 C July 1997 1/6 MJD50 THERMAL DATA o R t hj-ca se Thermal Resistance Junction-case Max 8.33 C/W o R t hj- amb Thermal Resistance Junction-ambient Max 100 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it I CES Collector Cut-off