ST am82223 free download

File name am82223.pdf

AM82223-010 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS . . REFRACTORY/GOLD METALLIZATION . EMITTER SITE BALLASTED :1 VSWR CAPABILITY AT RATED . . CONDITIONS LOW THERMAL RESISTANCE . . INPUT/OUTPUT MATCHING OVERLAY GEOMETRY .400 x .400 2NLFL (S042) . METAL/CERAMIC HERMETIC PACKAGE POUT = 9 W MIN. WITH 6.5 dB GAIN ORDER CODE hermetically sealed AM82223-010 BRANDING 82223-10 DESCRIPTION The AM82223-010 is a common base, silicon PIN CONNECTION NPN bipolar transistor designed for high gain and efficiency in the 2.2 - 2.3 GHz frequency range. Suitable for hi-rel aerospace telemetry applica- tions, the AM82223-010 is provided in the indus- try-standard AMPACTM metal/ceramic hermetic package and incorporates internal input and out- put impedance matching structures along with a rugged, emitter-site ballasted overlay die geome- try. AM82223-010 is capable of withstanding :1 1. Collector 3. Emitter load mismatch at any phase angle under full 2. Base 4. Base rated operating conditions. ABSOLUTE MAXIMUM RATINGS (T case = 25