Philips bfr106 cnv free download

File name bfr106_cnv.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BFR106 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR106 DESCRIPTION PINNING NPN silicon planar epitaxial transistor PIN DESCRIPTION in a plastic SOT23 envelope. It is lfpage 3 Code: R7p primarily intended for low noise, general RF applications. 1 base 2 emitter 3 collector 1 2 Top view MSB003 Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter 20 V VCEO collector-emitter voltage open base 15 V IC DC collector current 100 mA Ptot total power dissipation up to Ts = 70 C; note 1 500 mW hFE DC current gain IC = 50 mA; VCE = 9 V; Tamb = 25 C 25 80 fT transition frequency IC = 50 mA; VCE = 9 V; f = 500 MHz; 5 GHz Tamb = 25 C GUM maximum unilateral power gain IC = 30 mA; VCE = 6 V; f = 800 MHz; 11.5 dB Tamb = 25 C Vo output voltage IC = 50 mA; VCE = 9 V; RL = 75 ; 350 mV Tamb = 25 C; dim = 60 dB; f(pqr) = 793.25 MHz LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter