File information: | |
File name: | am0912-300.pdf [preview am0912-300] |
Size: | 75 kB |
Extension: | |
Mfg: | ST |
Model: | am0912-300 🔎 am0912300 |
Original: | am0912-300 🔎 |
Descr: | . Electronic Components Datasheets Active components Transistors ST am0912-300.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 30-07-2020 |
User: | Anonymous |
Multipart: | No multipart |
Information about the files in archive: | ||
Decompress result: | OK | |
Extracted files: | 1 | |
File name am0912-300.pdf AM0912-300 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . REFRACTORY/GOLD METALLIZATION . . EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY . . LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING . . OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE .400 x .500 2LFL (S038) . POUT = 300 W MIN. WITH 7.0 dB GAIN BANDWIDTH 255 MHz ORDER CODE AM0912-300 hermetically sealed BRANDING 0912-300 DESCRIPTION The AM0912-300 avionics power transistor is a broadband, high peak pulse power device speci- PIN CONNECTION fically designed for avionics applications requiring broad bandwidth with moderate duty cycle and pulse width constraints such as ground/ship based DME/TACAN. The AM0912-300 is also designed for specialized applications where reduced power is provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles. This device is capable of withstanding 15:1 VSWR mismatch load condition at any phase angle under full rated conditions. The AM0912-300 is housed in the unique BIG- 1. Collector 3. Emitter PACTM Hermetic Metal/Ceramic package with in- 2. Base 4. Base ternal Input/Output matching structures. ABSOLUTE MAXIMUM RATINGS (T case = 25 |
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