Philips bft93w free download

File name bft93w.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BFT93W PNP 4 GHz wideband transistor Product specification March 1994 Supersedes data of November 1992 NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION High power gain Silicon PNP transistor in a plastic, 3 handbook, 2 columns Gold metallization ensures SOT323 (S-mini) package. The excellent reliability BFT93W uses the same crystal as the SOT23 version, BFT93. SOT323 (S-mini) package. 1 2 PINNING APPLICATIONS Top view MBC870 PIN DESCRIPTION It is intended as a general purpose transistor for wideband applications 1 base BFT93W Marking code: X1. up to 2 GHz. 2 emitter 3 collector Fig.1 SOT323. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter 15 V VCEO collector-emitter voltage open base 12 V IC collector current (DC) 50 mA Ptot total power dissipation up to Ts = 93 C; note 1 300 mW hFE DC current gain IC = 30 mA; VCE = 5 V 20 50 Cre feedback capacitance IC = 0; VCE = 5 V; f = 1 MHz 1 pF fT transition frequency IC = 30 mA; VCE = 5 V; 4 GHz f = 500 MHz GUM maximum unilateral power gain IC = 30 mA; VCE = 5 V; 15.5 dB f = 500 MHz; Tamb = 25 C F