KEC khb5d0n50p f f2 free download

File name khb5d0n50p_f_f2.pdf

SEMICONDUCTOR KHB5D0N50P/F/F2 N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB5D0N50P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 500V, ID= 5.0A Drain-Source ON Resistance : RDS(ON)=1.5 @VGS = 10V Qg(typ.) = 21nC MAXIMUM RATING (Tc=25 ) RATING CHARACTERISTIC SYMBOL KHB5D0N50F UNIT KHB5D0N50P KHB5D0N50F2 KHB5D0N50F Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS 30 V @TC=25 5.0 5.0* ID Drain Current @TC=100 2.9 2.9* A Pulsed (Note1) IDP 20 20* Single Pulsed Avalanche Energy EAS 390 mJ (Note 2) Repetitive Avalanche Energy EAR 9.2 mJ (Note 1) Peak Diode Recovery dv/dt dv/dt 3.5 V/ns (Note 3) Drain Power Tc=25 73 38 W PD Dissipation Derate above 25 0.74 0.3 W/ Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 KHB5D0N50F2 Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 1.71 3.31 /W Thermal Resistance, Case-to-Sink RthCS 0.5 - /W Thermal Resistance, Junction-to- RthJA 62.5 62.5 /W Ambient * : Drain current limited by maximum junction temperature. PIN CONNECTION 2007. 5. 10 Revision No : 0 1/7