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STD7NB20 STD7NB20-1 N-CHANNEL 200V - 0.3 - 7A DPAK/IPAK PowerMESHTM MOSFET TYPE VDSS RDS(on) ID STD7NB20 200 V < 0.40 7A STD7NB20-1 200 V < 0.40 7A s TYPICAL RDS(on) = 0.3 3 3 2 s EXTREMELY HIGH dv/dt CAPABILITY 1 1 s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED DPAK IPAK s ADD SUFFIX "T4" FOR ORDERING IN TAPE & TO-252 TO-251 REEL DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding INTERNAL SCHEMATIC DIAGRAM performances. The new patent pending strip layout coupled with the Company's proprieraty edge termi- nation structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris- tics. APPLICATIONS s SWITH MODE POWER SUPPLIES (SMPS) s DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 200 V VDGR Drain-gate Voltage (RGS = 20 k) 200 V VGS Gate- source Voltage