Philips bfu630f free download

File name bfu630f.pdf

BFU630F NPN wideband silicon RF transistor Rev. 1 -- 15 December 2010 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.2 Features and benefits Low noise high gain microwave transistor Noise figure (NF) = 0.85 dB at 2.4 GHz High maximum stable gain 26 dB at 1.8 GHz 40 GHz fT silicon technology 1.3 Applications Low noise amplifiers for microwave communications systems WLAN and CDMA applications Analog/digital cordless applications Ku band oscillators DRO's LNB RKE AMR GPS ZigBee LTE, cellular, UMTS FM radio Mobile TV Bluetooth NXP Semiconductors BFU630F NPN wideband silicon RF transistor 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCBO collector-base voltage open emitter - - 16 V VCEO collector-emitter voltage open base - - 5.5 V VEBO emitter-base voltage open collector - - 2.5 V IC collector current - 3 30 mA Ptot total power dissipation Tsp 90 C [1] - - 200 mW hFE DC current gain IC = 5 mA; VCE = 2