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BUR51 HIGH CURRENT NPN SILICON TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE s NPN TRANSISTOR DESCRIPTION The BUR51 is a silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case, intented for use in switching and linear applications in military and industrial equipment. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (I E = 0) 300 V V CEO Collector-Emitter Voltage (I B = 0) 200 V V EBO Emitter-Base Voltage (I C = 0) 10 V IC Collector Current 60 A I CM Collector Peak Current (t p = 10 ms) 80 A IB Base Current 16 A o P tot Total Dissipation at T c 25 C 350 W o T stg Storage Temperature -65 to 200 C o Tj Max. Operating Junction Temperature 200 C June 1997 1/4 BUR51 THERMAL DATA o R thj-case Thermal Resistance Junction-case Max 0.5 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CBO Collector Cut-off V CB = 300 V 0.2 mA Current (I E = 0) V CB = 300 V T case = 125 o C 2 mA I CEO Collector Cut-off V CE =200 V 1 mA Current (I B = 0) I EBO Emitter Cut-off Current V EB = 7 V 0.2