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BUR51
HIGH CURRENT NPN SILICON TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE
s NPN TRANSISTOR
DESCRIPTION
The BUR51 is a silicon multiepitaxial planar NPN
transistor in modified Jedec TO-3 metal case,
intented for use in switching and linear
applications in military and industrial equipment.
1
2
TO-3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V CBO Collector-Base Voltage (I E = 0) 300 V
V CEO Collector-Emitter Voltage (I B = 0) 200 V
V EBO Emitter-Base Voltage (I C = 0) 10 V
IC Collector Current 60 A
I CM Collector Peak Current (t p = 10 ms) 80 A
IB Base Current 16 A
o
P tot Total Dissipation at T c 25 C 350 W
o
T stg Storage Temperature -65 to 200 C
o
Tj Max. Operating Junction Temperature 200 C
June 1997 1/4
BUR51
THERMAL DATA
o
R thj-case Thermal Resistance Junction-case Max 0.5 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CBO Collector Cut-off V CB = 300 V 0.2 mA
Current (I E = 0) V CB = 300 V T case = 125 o C 2 mA
I CEO Collector Cut-off V CE =200 V 1 mA
Current (I B = 0)
I EBO Emitter Cut-off Current V EB = 7 V 0.2