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Electronic components, integrated circuits, semiconductor - datasheets and schematics

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Descr: . Electronic Components Datasheets Active components Transistors ST stn3pf06.pdf
Group:Electronics > Components > Transistors
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STN3PF06 P-channel 60 V - 0.20 - 2.5 A - SOT-223 STripFETTM II Power MOSFET Features RDS(on) Type VDSS ID max 2 STN3PF06 60 V < 0.22 2.5 A Extremely dv/dt capability 3 2 100% avalanche tested 1 Application oriented characterization SOT-223 Application Switching applications Description Figure 1. Internal schematic diagram This Power MOSFET is the latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Table 1. Device summary Order code Marking Package Packaging STN3PF06 N3PF06 SOT-223 Tape and reel March 2008 Rev 4 1/12 www.st.com 12 Contents STN3PF06 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 6 3 Test circuits ... 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STN3PF06 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 60 V VGS Gate-source voltage

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