Philips blf871 blf871s free download

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BLF871; BLF871S UHF power LDMOS transistor Rev. 04 -- 19 November 2009 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications. Table 1. Typical performance RF performance at VDS = 40 V in a common-source 860 MHz test circuit. Mode of operation f PL PL(PEP) PL(AV) Gp D IMD3 PAR (MHz) (W) (W) (W) (dB) (%) (dBc) (dB) CW, class AB 860 100 - - 21 60 - - 2-tone, class AB f1 = 860; f2 = 860.1 - 100 - 21 47 -35 - DVB-T (8k OFDM) 858 - - 24 22 33 -34[1] 8.3[2] [1] Measured [dBc] with delta marker at 4.3 MHz from center frequency. [2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features 2-tone performance at 860 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A: Peak envelope power load power = 100 W Power gain = 21 dB Drain efficiency = 47 % Third order intermodulation distortion = -35 dBc DVB performance at 858 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A: Average output power = 24 W Power gain = 22 dB Drain efficiency = 33 % Third order intermodulation distortion = -34 dBc (4.3 MHz from center frequency) NXP Semiconductors BLF871; BLF871S UHF power LDMOS transistor Integrated ESD protection Excellent ruggedness High power gain High efficiency