Philips bft25 cnv free download

File name bft25_cnv.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BFT25 NPN 2 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification NPN 2 GHz wideband transistor BFT25 DESCRIPTION PINNING NPN transistor in a plastic SOT23 PIN DESCRIPTION envelope. Code: V1p It is primarily intended for use in RF 1 base lfpage 3 low power amplifiers, such as in 2 emitter pocket phones, paging systems, etc. The transistor features low current 3 collector consumption (100 A to 1 mA); due to its high transition frequency, it also 1 2 has excellent wideband properties Top view MSB003 and low noise up to high frequencies. Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCBO collector-base voltage open emitter 8 V VCEO collector-emitter voltage open base 5 V Ic DC collector current 6.5 mA Ptot total power dissipation up to Ts = 167 C; note 1 30 mW fT transition frequency IC = 1 mA; VCE = 1 V; f = 500 MHz; 2.3 GHz Tamb = 25 C Cre feedback capacitance IC = 1 mA; VCE = 1 V; f = 1 MHz; 0.45 pF Tamb = 25 C GUM maximum unilateral power gain IC = 1 mA; VCE = 1 V; f = 500 MHz; 18 dB Tamb = 25 C F noise figure IC = 1 mA; VCE = 1 V; f = 500 MHz; 3.8 dB Tamb = 25 C LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134).