Wietron mbt3906dw free download

File name mbt3906dw.pdf

MBT3906DW Dual General Purpose Transistor 3 2 1 6 5 PNP+PNP Silicon 4 1 2 P b Lead(Pb)-Free 3 4 5 6 SOT-363(SC-88) PNP+PNP Maximum Ratings Rating Symbol Value Unit Collector-Emitter Voltage VCEO -40 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current-Continuous IC -200 mAdc Thermal Characteristics Characteristics Symbol Max Unit (1) Total Device Dissipation TA=25 C PD 150 mW Thermal Resistance, Junction to Ambient R JA 833 C/W Junction and Storage, Temperature TJ,Tstg -55 to +150 C Device Marking MBT3906DW=A2 Electrical Characteristics (TA=25 C Unless Otherwise noted) Characteristics Symbol Min Max Unit Off Characteristics Collector-Emitter Breakdown Voltage(2) (IC=-1.0mAdc.IB=0) V(BR)CEO -40 - Vdc Collector-Base Breakdown Voltage (IC=-10 uAdc, IE=0) V(BR)CBO -40 - Vdc Emitter-Base Breakdown Voltage (IE=-10 uAdc, IC=0) V(BR)EBO -5.0 - Vdc Base Cutoff Current (VCE=-30 Vdc, VEB =-3.0 Vdc) IBL