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MBT3906DW
Dual General Purpose Transistor 3 2 1
6 5
PNP+PNP Silicon
4
1
2
P b Lead(Pb)-Free 3
4 5 6 SOT-363(SC-88)
PNP+PNP
Maximum Ratings
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO -40 Vdc
Collector-Base Voltage VCBO -40 Vdc
Emitter-Base Voltage VEBO -5.0 Vdc
Collector Current-Continuous IC -200 mAdc
Thermal Characteristics
Characteristics Symbol Max Unit
(1)
Total Device Dissipation TA=25 C PD 150 mW
Thermal Resistance, Junction to Ambient R JA 833 C/W
Junction and Storage, Temperature TJ,Tstg -55 to +150 C
Device Marking
MBT3906DW=A2
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics Symbol Min Max Unit
Off Characteristics
Collector-Emitter Breakdown Voltage(2) (IC=-1.0mAdc.IB=0) V(BR)CEO -40 - Vdc
Collector-Base Breakdown Voltage (IC=-10 uAdc, IE=0) V(BR)CBO -40 - Vdc
Emitter-Base Breakdown Voltage (IE=-10 uAdc, IC=0) V(BR)EBO -5.0 - Vdc
Base Cutoff Current (VCE=-30 Vdc, VEB =-3.0 Vdc) IBL - -50 nAdc
Collector Cutoff Current (VCE=-30Vdc, VEB=-3.0Vdc) ICEX - -50 nAdc
1.Decice Mounted on FR4 glass epoxy printed circuit board using the minimun recommended foot print.
2.Pulse Test:Pluse Width <300