HT Semiconductor 2sc5345 free download

File name 2sc5345.pdf

2SC5345 TRANSISTOR (NPN) FEATURES SOT-23 RF amplifier High current transition frequency fT=550MHz(Typ.), 1. BASE [VCE=6V, IE=-1mA] 2. EMITTER Low output capacitance : 3. COLLECTOR Cob=1.4pF(Typ.) [VCB=6V, IE=0] Low base time constant and high gain Excellent noise response Marking: 5345 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 4 V IC Collector Current 20 mA PC Collector Power dissipation 300 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10A, IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=5mA, IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE=10A, IC=0 4 V Collector cut-off current ICBO VCB=30V, IE=0 0.5 A Emitter cut-off current IEBO VEB=4V, IC=0 0.5 A DC current gain hFE VCE=6V, IC=1mA 40 240 Collector-emitter saturation voltage VCE(sat) IC=10mA, IB=1mA 0.3 V Transition frequency fT VCE=6V, IC=1mA 550 MHz Collector output capacitance Cob VCB=6V, IE=0, f=1MHz 1.4 pF CLASSIFICATION OF hFE Rank R O Y Range 40-80 70-140 120-240 1 JinYu