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DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFG21W UHF power transistor Product specification 1998 Jul 06 Supersedes data of 1997 Nov 21 NXP Semiconductors Product specification UHF power transistor BFG21W FEATURES PINNING High power gain PIN DESCRIPTION High efficiency 1, 3 emitter 1.9 GHz operating area 2 base Linear and non-linear operation. 4 collector APPLICATIONS Common emitter class-AB output stage in hand held radio equipment at 1.9 GHz such as DECT, PHS, etc. handbook, halfpage 3 4 Driver for DCS1800, 1900. DESCRIPTION 2 1 NPN double polysilicon bipolar power transistor with buried layer for low voltage medium power applications Top view MSB842 encapsulated in a plastic, 4-pin dual-emitter SOT343R package. Marking code: P1. Fig.1 Simplified outline SOT343R. QUICK REFERENCE DATA RF performance at Ts 60 C in a common emitter test circuit. f VCE PL Gp C MODE OF OPERATION (GHz) (V) (dBm) (dB) (%) Pulsed class-AB; < 1 : 2; tp = 5 ms 1.9 3.6 26 10 typ.55 1998 Jul 06 2 NXP Semiconductors Product specification UHF power transistor BFG21W LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter 15 V VCEO collector-emitter voltage open base 4.5 V VEBO