Philips buk542-100a-b 1 free download

File name buk542-100a-b_1.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK542-100A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic full-pack BUK542 -100A -100B envelope. VDS Drain-source voltage 100 100 V The device is intended for use in ID Drain current (DC) 6.3 5.6 A Switched Mode Power Supplies Ptot Total power dissipation 22 22 W (SMPS), motor control, welding, RDS(ON) Drain-source on-state 0.28 0.35 DC/DC and AC/DC converters, and resistance; VGS = 5 V in automotive and general purpose switching applications. PINNING - SOT186 PIN CONFIGURATION SYMBOL PIN DESCRIPTION d case 1 gate 2 drain g 3 source case isolated 1 2 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 100 V VDGR Drain-gate voltage RGS = 20 k - 100 V