Philips bfm505 free download

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DISCRETE SEMICONDUCTORS DATA SHEET BFM505 Dual NPN wideband transistor Product specification 1996 Oct 08 Supersedes data of 1995 Sep 04 NXP Semiconductors Product specification Dual NPN wideband transistor BFM505 FEATURES PINNING - SOT363A Small size PIN SYMBOL DESCRIPTION Temperature and hFE matched 1 b1 base 1 Low noise and high gain 2 e1 emitter 1 High gain at low current and low capacitance at low 3 c2 collector 2 voltage 4 b2 base 2 Gold metallization ensures excellent reliability. 5 e2 emitter 2 6 c1 collector 1 APPLICATIONS Oscillator and buffer amplifiers 6 5 4 Balanced amplifiers handbook, halfpage c1 c2 LNA/mixer. b1 b2 DESCRIPTION e1 e2 Dual transistor with two silicon NPN RF dies in a surface 1 2 3 mount, 6-pin SOT363 (S-mini) package. The transistors Top view MAM210 are primarily intended for wideband applications in the Marking code: N0. GHz-range in the RF front end of analog and digital cellular phones, cordless phones, radar detectors, pagers and Fig.1 Simplified outline and symbol. satellite TV-tuners. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Any single transistor Cre feedback capacitance Ie = 0; VCB = 3 V; f = 1 MHz 0.22 pF fT transition frequency IC = 5 mA; VCE = 3V; f = 1 GHz 9