Philips bf1210 free download

File name bf1210.pdf

BF1210 Dual N-channel dual gate MOSFET Rev. 01 -- 25 October 2006 Product data sheet 1. Product profile 1.1 General description The BF1210 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor has a SOT363 micro-miniature plastic package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Two low noise gain controlled amplifiers in a single package; both with a partly integrated bias I Superior cross modulation performance during AGC I High forward transfer admittance I High forward transfer admittance to input capacitance ratio 1.3 Applications I Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage N digital and analog television tuners N professional communication equipment NXP Semiconductors BF1210 Dual N-channel dual gate MOSFET 1.4 Quick reference data Table 1. Quick reference data Per MOSFET unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage - - 6 V ID drain current DC - - 30 mA Ptot total power dissipation Tsp 107