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BCW66 SMALL SIGNAL NPN TRANSISTORS Type Marking BCW66F EF BCW 66G EG BCW 66H EH s SILICON EPITAXIAL PLANAR NPN TRANSISTORS 2 s MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING 3 1 CIRCUITS s MEDIUM CURRENT AF AMPLIFICATION AND SWITCHING SOT-23 s PNP COMPLEMENT IS BCW68 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t V CES Collector-Emitter Voltage (V BE = 0) 75 V V CEO Collector-Emitter Voltage (I B = 0) 45 V V EBO Emitter-Base Voltage (I C = 0) 5 V IC Collector Current 0.8 A I CM Collector Peak Current 1 A IB Base Current 0.1 A o P t ot Total Dissipation at T c = 25 C 360 mW o T stg Storage Temperature -65 to 150 C o Tj Max. O perating Junction Temperature 150 C October 1997 1/4 BCW66 THERMAL DATA o R t hj-amb