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BCW66
SMALL SIGNAL NPN TRANSISTORS
Type Marking
BCW66F EF
BCW 66G EG
BCW 66H EH
s SILICON EPITAXIAL PLANAR NPN
TRANSISTORS 2
s MINIATURE PLASTIC PACKAGE FOR
APPLICATION IN SURFACE MOUNTING 3
1
CIRCUITS
s MEDIUM CURRENT AF AMPLIFICATION
AND SWITCHING SOT-23
s PNP COMPLEMENT IS BCW68
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
V CES Collector-Emitter Voltage (V BE = 0) 75 V
V CEO Collector-Emitter Voltage (I B = 0) 45 V
V EBO Emitter-Base Voltage (I C = 0) 5 V
IC Collector Current 0.8 A
I CM Collector Peak Current 1 A
IB Base Current 0.1 A
o
P t ot Total Dissipation at T c = 25 C 360 mW
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. O perating Junction Temperature 150 C
October 1997 1/4
BCW66
THERMAL DATA
o
R t hj-amb