ST stb8ns25 free download

File name stb8ns25.pdf

STB8NS25 N-CHANNEL 250V - 0.38 - 8A D2PAK MESH OVERLAYTM MOSFET TYPE VDSS RDS(on) ID STB8NS25 250 V < 0.45 8A s TYPICAL RDS(on) = 0.38 s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED 3 1 DESCRIPTION Using the latest high voltage MESH OVERLAYTM D2PAK process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performance. The new patented STrip layout cou- pled with the Company's proprietary edge termina- tion structure, makes it suitable in coverters for INTERNAL SCHEMATIC DIAGRAM lighting applications. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 250 V VDGR Drain-gate Voltage (RGS = 20 k) 250 V VGS Gate- source Voltage