File information: | |
File name: | msc81350m.pdf [preview msc81350m] |
Size: | 75 kB |
Extension: | |
Mfg: | ST |
Model: | msc81350m 🔎 |
Original: | msc81350m 🔎 |
Descr: | . Electronic Components Datasheets Active components Transistors ST msc81350m.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 05-08-2020 |
User: | Anonymous |
Multipart: | No multipart |
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Decompress result: | OK | |
Extracted files: | 1 | |
File name msc81350m.pdf MSC81350M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . REFRACTORY/GOLD METALLIZATION . . RUGGEDIZED VSWR 20:1 INTERNAL INPUT/OUTPUT MATCHING . . LOW THERMAL RESISTANCE METAL/CERAMIC HERMETIC PACKAGE P OUT = 350 W MIN. WITH 7.0 dB GAIN .400 x .400 2NLFL (S042) hermetically sealed ORDER CODE BRANDING MSC81350M 81350M PIN CONNECTION DESCRIPTION The MSC81350M device is a high power pulsed transistor specifically designed for IFF avionics applications. This device is capable of withstanding a minimum 20:1 load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and semi automatic wire bonding techniques ensure high reliability and product consistency. The MSC81350M is housed in the unique 1. Collector 3. Emitter AMPACTM package with internal input/output 2. Base 4. Base matching structures. ABSOLUTE MAXIMUM RATINGS (T case = 25 |
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