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BU326A HIGH VOLTAGE NPN SILICON POWER TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE s NPN TRANSISTOR s FAST SWITCHING SPEED APPLICATIONS: s POWER SUPPLIES s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 1 2 DESCRIPTION The BU326A is a silicon multiepitaxial mesa NPN TO-3 transistor in Jedec TO-3 metal case particularly intended for switch-mode CTV supply system. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CES Collector-Emitter Voltage (V BE = 0) 900 V V CEO Collector-Emitter Voltage (I B = 0) 400 V V EBO Emitter-Base Voltage (I C = 0) 10 V IC Collector Current 6 A I CM Collector Peak Current 8 A IB Base Current 3 A P tot Total Power Dissipation at T case 25 o C 75 W o T stg Storage Temperature -65 to 200 C o Tj Max. Operating Junction Temperature 200 C June 1997 1/4 BU326A THERMAL DATA o R thj-case Thermal Resistance Junction-case Max 2.33 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CES Collector Cut-off Current V CE = 900 V 1 mA o (V BE = 0) V CE = 900 V T c = 125 C 2 mA I EBO Emitter Cut-off Current V EB = 10 V 10 mA (I C = 0) V CEO(sus) Collector-Emitter I C = 100 mA 400 V Sustaining Voltage(I B = 0) V CE(sat) Collector-Emitter I C = 2.5 A I B = 0.5 A 1.5 V Satur