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STD5NM50 STD5NM50-1 N-CHANNEL 500V - 0.7 - 7.5A DPAK/IPAK MDmeshTMPower MOSFET TYPE VDSS RDS(on) ID STD5NM50 500V <0.8 7.5 A STD5NM50-1 500V <0.8 7.5 A n TYPICAL RDS(on) = 0.7 n HIGH dv/dt AND AVALANCHE CAPABILITIES 3 3 100% AVALANCHE TESTED 2 n 1 1 n LOW INPUT CAPACITANCE AND GATE CHARGE n LOW GATE INPUT RESISTANCE DPAK IPAK n TIGHT PROCESS CONTROL AND HIGH TO-252 TO-251 MANUFACTURING YIELDS (Add Suffix "-1") DESCRIPTION The MDmeshTM is a new revolutionary MOSFET technology that associates the Multiple Drain pro- cess with the Company's PowerMESHTM horizontal INTERNAL SCHEMATIC DIAGRAM layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products. APPLICATIONS The MDmeshTM family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 500 V VDGR Drain-gate Voltage (RGS = 20 k) 500 V VGS Gate- source Voltage