ST 2n3055 free download

File name 2n3055.pdf

2N3055 SILICON NPN TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Valu e Unit V CBO Collector-Base Voltage (IE = 0) 100 V V CER Collector-Emitter Voltage (RBE = 100) 70 V V CEO Collector-Emitter Voltage (I B = 0) 60 V V EBO Emitter-Base Voltage (I C = 0) 7 V IC Collector Current 15 A IB Base Current 7 A o P tot T otal Dissipation at T c 25 C 115 W o T s tg Storage Temperature -65 to 200 C o Tj Max. O perating Junction Temperature 200 C October 1995 1/4 2N3055 THERMAL DATA o R thj -ca se Thermal Resistance Junction-case Max 1.5 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l Parameter T est Con ditio ns Min . T yp. Max. Unit I CEV Collector Cut-off V CE = 100 V 1 mA Current (V BE = -1.5V) V CE = 100 V T j = 150 o C 5 mA I CEO Collector Cut-off V CE = 30 V 0.7 mA Current (I B = 0) I EBO Emitter Cut- off Current V EB = 7 V 5 mA (I C = 0) V CEO(sus) Collector-Emitter I C = 200 mA