Philips pbss4041sn free download

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PBSS4041SN 60 V, 6.7 A NPN/NPN low VCEsat (BISS) transistor Rev. 2 -- 18 October 2010 Product data sheet 1. Product profile 1.1 General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP/PNP NPN/PNP NXP Name complement complement PBSS4041SN SOT96-1 SO8 PBSS4041SP PBSS4041SPN 1.2 Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 60 V IC collector current - - 6.7 A ICM peak collector current single pulse; - - 15 A tp 1 ms RCEsat collector-emitter IC = 4 A; IB = 0.2 A [1] - 32 48 m saturation resistance [1] Pulse test: tp 300 s; 0.02. NXP Semiconductors PBSS4041SN 60 V, 6.7 A NPN/NPN low VCEsat (BISS) transistor 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol 1 emitter TR1 8 5 8 7 6 5 2 base TR1 3 emitter