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STW8NB80 N - CHANNEL 800V - 1.2 - 7.5A - TO-247 PowerMESHTM MOSFET PRELIMINARY DATA TYPE V DSS R DS(on) ID STW8NB80 800 V < 1.6 7.5 A s TYPICAL RDS(on) = 1.2 (s) s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES ct du ) s GATE CHARGE MINIMIZED ro 3 DESCRIPTION 2 t(s 1 P Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an te advanced family of power MOSFETs with le uc TO-247 od outstanding performances. The new patent o bs e Pr pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche - O let and dv/dt capabilities and unrivalled gate charge INTERNAL SCHEMATIC DIAGRAM (s) bso and switching characteristics. ct APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) du ) - O s s DC-AC CONVERTERS FOR WELDING ro EQUIPMENT AND UNINTERRUPTIBLE t(s POWER SUPPLIES AND MOTOR DRIVE P s HIGH CURRENT, HIGH SPEED SWITCHING ol ete oduc O bs e Pr ABSOLUTE MAXIMUM RATINGS let Symbol Parameter Value Unit V DS Drain-source Voltage (V GS = 0) 800 V so V DGR Drain- gate Voltage (R GS = 20 k) 800 V