ST hd1750jl free download

File name hd1750jl.pdf

HD1750JL Very high voltage NPN power transistor for high definition and slim CRT display PRELIMINARY DATA Features State-of-the-art technology: diffused collector "enhanced generation" EHVS1 Wider range of optimum drive conditions Less sensitive to operating temperature variation In compliance with the 2002/93/EC European 3 directive 2 1 TO-264 Description The HD1750JL is manufactured using Diffused Collector in Planar technology adopting new and Enhanced High Voltage Stricture 1 (E.H.V.S.1) developed to fit High-Definition CRT display. The new HD product series show improved silicon Internal schematic diagram efficiency bringing updated performance to the Horizontal Deflection stage. Applications High-definition and slim CRT TV and monitors Order code Part number Marking Package Packaging HD1750JL HD1750JL TO-264 Tube February 2007 Rev 3 1/10 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 10 change without notice. Electrical ratings HD1750JL 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VBE = 0) 1700 V VCEO Collector-emitter voltage (IB = 0) 800 V VEBO Emitte-base voltage (IC = 0) 10 V IC Collector current 24 A ICM Collector peak current (tP < 5ms) 36 A IB Base current 12 A IBM Base peak current (tP < 5ms) 18 A