Philips pbhv8140z free download

File name pbhv8140z.pdf

PBHV8140Z 500 V, 1 A NPN high-voltage low VCEsat (BISS) transistor Rev. 01 -- 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9540Z. 1.2 Features High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AEC-Q101 qualified Medium power SMD plastic package 1.3 Applications LED driver for LED chain module LCD backlighting Automotive motor management Switch Mode Power Supply (SMPS) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCESM collector-emitter peak VBE = 0 V - - 500 V voltage VCEO collector-emitter voltage open base - - 400 V IC collector current - - 1 A hFE DC current gain VCE = 10 V; [1] 100 155 - IC = 50 mA [1] Pulse test: tp 300 s; 0.02. NXP Semiconductors PBHV8140Z 500 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 base 4 2, 4 2 collector 3 emitter 1 4 collector 1 2 3 3 sym016 3. Ordering information Table 3. Ordering information Type number Package Name Description