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BUV98V NPN TRANSISTOR POWER MODULE s HIGH CURRENT POWER BIPOLAR MODULE s VERY LOW Rth JUNCTION CASE s SPECIFIED ACCIDENTAL OVERLOAD AREAS 4 s ISOLATED CASE (2500V RMS) 3 s EASY TO MOUNT s LOW INTERNAL PARASITIC INDUCTANCE 1 INDUSTRIAL APPLICATIONS: 2 s MOTOR CONTROL s SMPS & UPS s WELDING EQUIPMENT Pin 4 not connected ISOTOP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VC EV Collector-Emitter Voltage (V BE = -5 V) 850 V V CEO(sus) Collector-Emitter Voltage (I B = 0) 450 V V EBO Emitter-Base Voltage (IC = 0) 7 V IC Collector Current 30 A I CM Collector Peak Current (t p = 10 ms) 60 A IB Base Current 8 A IB M Base Peak Current (tp = 10 ms) 30 A P tot Total Dissipation at Tc = 25 o C 150 W o T stg Storage Temperature -55 to 150 C o Tj Max. Operating Junction Temperature 150 C V ISO Insulation Withstand Voltage (AC-RMS) 2500 V January 1995 1/7 BUV98V THERMAL DATA o R thj-cas e Thermal Resistance Junction-case Max 0.83 C/W R thc-h Thermal Resistance Case-heatsink With Conductive o Grease Applied Max 0.05 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit IC ER