Philips pbss4041spn free download

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PBSS4041SPN 60 V NPN/PNP low VCEsat (BISS) transistor Rev. 2 -- 20 October 2010 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN PNP/PNP NXP Name complement complement PBSS4041SPN SOT96-1 SO8 PBSS4041SN PBSS4041SP 1.2 Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications Loadswitch Charging circuits Battery-driven devices Power switches (e.g. motors, fans) Power management 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR1; NPN low VCEsat transistor VCEO collector-emitter voltage open base - - 60 V IC collector current - - 6.7 A ICM peak collector current single pulse; tp 1 ms - - 15 A RCEsat collector-emitter IC = 4 A; IB = 0.2 A [1] - 32 48 m saturation resistance NXP Semiconductors PBSS4041SPN 60 V NPN/PNP low VCEsat (BISS) transistor Table 2. Quick reference data ...continued Symbol Parameter Conditions Min Typ Max Unit TR2; PNP low VCEsat transistor VCEO collector-emitter voltage open base - - -60 V IC collector current