Philips bfg310w xr free download

File name bfg310w_xr.pdf

BFG310W/XR NPN 14 GHz wideband transistor Rev. 01 -- 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. 1.2 Features s High power gain s Low noise figure s High transition frequency s Gold metallization ensures excellent reliability 1.3 Applications s Intended for Radio Frequency (RF) front end applications in the GHz range, such as: x analog and digital cellular telephones x cordless telephones (Cordless Telephone (CT), Personal Communication Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.) x radar detectors x pagers x Satellite Antenna TeleVision (SATV) tuners 1.4 Quick reference data Table 1: Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCBO collector-base voltage open emitter - - 15 V VCEO collector-emitter voltage open base - - 6 V IC collector current (DC) - - 10 mA Ptot total power dissipation Tsp 145