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File name buv27-.pdf

BUV27 MEDIUM POWER NPN SILICON TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE s NPN TRANSISTOR s FAST SWITCHING SPEED s LOW COLLECTOR EMITTER SATURATION APPLICATIONS s SWITCHING REGULATORS s MOTOR CONTROL 3 DESCRIPTION 2 1 The BUV27 is a Multiepitaxial Planar NPN Transistor in TO-220 package. It is intended for use in high frequency and efficency converters, TO-220 switching regulators and motor control. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-base Voltage (I E = 0) 240 V V CEO Collector-Emitter Voltage (I B = 0) 120 V V EBO Emitter-Base Voltage (I C = 0) 7 V IC Collector Current 12 A I CM Collector Peak Current 20 A IB Base Current 4 A I BM Base Peak Current 6 A P tot Total Dissipation at Tc < 25 o C 85 W P tot Total Dissipation at T c < 60 o C 65 W o T stg Storage Temperature -65 to +175 C o Tj Max. Operating Junction Temperature 175 C June 1997 1/4 BUV27 THERMAL DATA o R thj-case Thermal Resistance Junction-case Max 1.76 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit o I CER Collector Cut-off V CE = 240V T c = 125 C 3 mA Current (R BE = 50) o I CEX Collector Cut-off V CE = 240V VBE = -1.5V T c = 125 C 1 mA Current I EBO Emitter Cut-off