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BUL67 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE s HIGH RUGGEDNESS s NPN TRANSISTOR s HIGH VOLTAGE CAPABILITY s MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION s VERY HIGH SWITCHING SPEED s FULLY CHARACTERISED AT 125oC 3 APPLICATIONS 2 1 s ELECTRONICS TRANFORMER FOR HALOGEN LAMPS s SWITCH MODE POWER SUPPLIES TO-220 DESCRIPTION The BUL67 is manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance. It uses a Hollow Emitter structure to enhance switching speeds. INTERNAL SCHEMATIC DIAGRAM The BUL series is designed for use in lighting applications and in low cost switch-mode power supplies. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t V CES Collector-Emitter Voltage (V BE = 0) 700 V V CEO Collector-Emitter Voltage (I B = 0) 400 V V EBO Emitter-Base Voltage (I C = 0) 9 V IC Collector Current 10 A I CM Collector Peak Current (tp < 5 ms) 18 A IB Base Current 3.5 A I BM Base Peak Current (t p < 5 ms) 7 A P t ot Total Dissipation at T c = 25 o C 100 W o T stg St orage Temperature -65 to 150 C o Tj Max. Operating Junction Temperature 150 C September 1997 1/6 BUL67 THERMAL DATA o R t hj-ca se Thermal Resistance Junction-Case Max 1.25 C/W o R t hj- amb Thermal Resistance Junction-Ambient Max 62.5 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Test