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STP5NB100 STP5NB100FP N-CHANNEL 1000V - 2.4 - 5A TO-220/TO-220FP PowerMeshTM MOSFET TYPE VDSS RDS(on) ID STP5NB100 1000 V < 2.7 5A STP5NB100FP 1000 V < 2.7 5A n TYPICAL RDS(on) = 2.4 n EXTREMELY HIGH dv/dt CAPABILITY n 100% AVALANCHE TESTED n VERY LOW INTRINSIC CAPACITANCES 3 3 2 2 n GATE CHARGE MINIMIZED 1 1 TO-220 TO-220FP DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprieraty edge termi- INTERNAL SCHEMATIC DIAGRAM nation structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris- tics. APPLICATIONS n HIGH CURRENT, HIGH SPEED SWITCHING n SWITH MODE POWER SUPPLIES (SMPS) n DC-AC CONVERTERS FOE WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP5NB100 STP5NB100FP VDS Drain-source Voltage (VGS = 0) 1000 V VDGR Drain-gate Voltage (RGS = 20 k) 1000 V VGS Gate- source Voltage