Philips pbss4032spn free download

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PBSS4032SPN 30 V NPN/PNP low VCEsat (BISS) transistor Rev. 2 -- 14 October 2010 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN PNP/PNP NXP Name complement complement PBSS4032SPN SOT96-1 SO8 PBSS4032SN PBSS4032SP 1.2 Features and benefits Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications DC-to-DC conversion Battery-driven devices Power management Charging circuits 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR1; NPN low VCEsat transistor VCEO collector-emitter voltage open base - - 30 V IC collector current - - 5.7 A ICM peak collector current single pulse; tp 1 ms - - 10 A RCEsat collector-emitter IC = 4 A; IB = 0.4 A [1] - 45 62.5 m saturation resistance NXP Semiconductors PBSS4032SPN 30 V NPN/PNP low VCEsat (BISS) transistor Table 2. Quick reference data ...continued Symbol Parameter Conditions Min Typ Max Unit TR2; PNP low VCEsat transistor VCEO collector-emitter voltage open base - - -30 V IC collector current