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STP5NB90 STP5NB90FP N - CHANNEL 900V - 2.3 - 5A - TO-220/TO-220FP PowerMESHTM MOSFET PRELIMINARY DATA TYPE V DSS R DS(on) ID ST P5NB90 900 V < 2.5 5 A ST P5NB90FP 900 V < 2.5 5 A s TYPICAL RDS(on) = 2.3 s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED 3 3 2 2 DESCRIPTION 1 1 Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an TO-220 TO-220FP advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge INTERNAL SCHEMATIC DIAGRAM and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s UNINTERRUPTIBLE POWER SUPPLY(UPS) s DC-DC & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Un it STP5NB90 STP5NB90F P V DS Drain-source Voltage (V GS = 0) 900 V V DGR Drain- gate Voltage (R GS = 20 k) 900 V V GS G ate-source Voltage