HT Semiconductor mmbt4403 free download

File name mmbt4403.pdf

MMBT4403 TRANSISTOR (PNP) FEATURES Switching transistor SOT-23 MARKING MMBT4403=2T 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Units 3. COLLECTOR VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100A , IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-100A, IC=0 -5 V Collector cut-off current ICBO VCB=-35V, IE=0 -0.1 A Collector cut-off current ICEO VCE=-35 V, IB=0 -0.1 A Emitter cut-off current IEBO VEB=-4V,IC=0 -0.1 A DC current gain hFE VCE=-2V, IC= -150mA 100 300 Collector-emitter saturation voltage VCE(sat) IC=-150mA, IB=-15mA -0.4 V Base-emitter saturation voltage VBE(sat) IC=- 150mA, IB=-15mA -0.95 V VCE= -10V, IC= -20mA Transition frequency fT 200 MHz f = 100MHz 1 JinYu www.htsemi.com semiconductor Date:2011/05